900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Micron

MT5C1605 Datasheet Preview

MT5C1605 Datasheet

4K x 4 SRAM

No Preview Available !

SRAM
4Kx 4 SRAM
WITH OUTPUT ENABLE
FEATURES
• High speed: 9, 10, 12, 15, 20 and 25ns
• High-performance, low-power, CMOS double-metal
process
• Single +5V ±10% power supply
• Easy memory expansion with CE and OE options
• All inputs and outputs are TTL-compatible
OPTIONS
• Timing
9ns access
10ns access
12ns access
15ns access
20ns access
25ns access
MARKING
-9
-10
-12
-15
-20
-25
• Packages
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
• 2V data retention
None
DJ
L
• Temperature
Commercial (O°C to +70°C)
Industrial (-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended (-55°C to +125°C)
None
IT
AT
XT
• Part Number Example: MT5C1605DJ-15 IT
NOTE: Not all combinations of operating temperature, speed, data retention
and low power are necessarily available. Please contact the factory for availabil-
ity of specific part number combinations.
PIN ASSIGNMENT (Top View)
22-Pin DIP
(SA-2)
A4 1
A5 2
A6 3
A7 4
A8 ( 5
A9 6
P'-./
22
Vee
P21 A3
P20 A2
P19 A1
n18 AO
n17 NC
A10 l 7
16 D04
A11 l 8
CE l 9
15 D03
14 D02
OE [ 10
13 D01
Vss [ 11
12 WE
24-Pin SOJ
(SO-1 )
A4[
AS [
A6 [
A7 [
AS [
A9 [
NC [
A10 [
A11 [
CE [
DE [
Vss [
1
2
3
4
5
6
7
8
9
10
11
12
b24 Vee
P23 A3
P22 A2
P21 A1
P20 AO
P19 NC
P18 NC
P17 DQ4
P16 DQ3
P15 DQ2
P14 DQ1
P13 WE
U'I
o<
~
en
»:s:J:l
GENERAL DESCRIPTION
The MT5C1605 is organized as a 4,096 x 4 SRAM using a
four-transistor memory cell with a high-speed, low-power
CMOSprocess. MicronSRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micron offers chip enable (CE) and output enable (OE) with
this organization. This enhancement can place the outputs
in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE) and CE inputs are both LOW. Reading is
accomplished when WE remains HIGH and OE and CE go
LOW. The device offers a reduced power standby mode
when disabled. This allows system designers to meet low
standby power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL-compatible.
MT5C1605
REV. 12/93
1-51
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
©1993, Micron Semiconductor, Inc.




Micron

MT5C1605 Datasheet Preview

MT5C1605 Datasheet

4K x 4 SRAM

No Preview Available !

c.n
<
0
!:i
en
»:s0:
FUNCTIONAL BLOCK DIAGRAM
A_
A_
A_
A_
A_
A_
A_
II:
W
0
0
0w
0
3:
0
II:
(LSB)
Vee GND
++
16,384-BIT
MEMORY ARRAY
-l
0
II:
Iz-
0
0
~
COLUMN DECODER
(LSB)
POWER
ttttt
DOWN
AAAAA
DQ4
DQ1
CE
OE
WE
MT5C1605
REV. 12193
TRUTH TABLE
MODE
1lt "Ct we- DO
POWER
STANDBY
X H X HIGH-Z STANDBY
READ
L L H Q ACTIVE
NOT SELECTED H L H HIGH-Z ACTIVE
WRITE
X L L D ACTIVE
1-52
Micron Semiconductor, Inc., reserves the right to change products or specifications wHhout notice.
©1993, Micrnn Semiconductot,lnc.


Part Number MT5C1605
Description 4K x 4 SRAM
Maker Micron
PDF Download

MT5C1605 Datasheet PDF






Similar Datasheet

1 MT5C1601 16K x 1 SRAM
Micron
2 MT5C1604 4K x 4 SRAM
Micron
3 MT5C1605 4K x 4 SRAM
Micron
4 MT5C1608 2K x 8 SRAM
Micron





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy