4Kx 4 SRAM
WITH OUTPUT ENABLE
• High speed: 9, 10, 12, 15, 20 and 25ns
• High-performance, low-power, CMOS double-metal
• Single +5V ±10% power supply
• Easy memory expansion with CE and OE options
• All inputs and outputs are TTL-compatible
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
• 2V data retention
Commercial (O°C to +70°C)
Industrial (-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended (-55°C to +125°C)
• Part Number Example: MT5C1605DJ-15 IT
NOTE: Not all combinations of operating temperature, speed, data retention
and low power are necessarily available. Please contact the factory for availabil-
ity of specific part number combinations.
PIN ASSIGNMENT (Top View)
A8 ( 5
A10 l 7
A11 l 8
CE l 9
OE [ 10
Vss [ 11
The MT5C1605 is organized as a 4,096 x 4 SRAM using a
four-transistor memory cell with a high-speed, low-power
CMOSprocess. MicronSRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Micron offers chip enable (CE) and output enable (OE) with
this organization. This enhancement can place the outputs
in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE) and CE inputs are both LOW. Reading is
accomplished when WE remains HIGH and OE and CE go
LOW. The device offers a reduced power standby mode
when disabled. This allows system designers to meet low
standby power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL-compatible.
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
©1993, Micron Semiconductor, Inc.