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Micron

MT5C1604 Datasheet Preview

MT5C1604 Datasheet

4K x 4 SRAM

No Preview Available !

AJlIC:I=ICN
1-·
4KMxT45CSR16A0M4
SRAM
4Kx4 SRAM
U1
-------------------------------------------~
FEATURES
• High speed: 9, 10, 12, 15, 20 and 25ns
• High-performance, low-power, CMOS double-metal
process
• Single +5V ±1O% power supplL
• Easy memory expansion with CE option
• All inputs and outputs are TIL-compatible
OPTIONS
• Timing
9ns access
IOns access
12ns access
15ns access
20ns access
25ns access
MARKING
-9
-10
-12
-15
-20
-25
• Packages
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
None
DJ
PIN ASSIGNMENT (Top View)
2o-Pin DIP
(5A-1)
PA4 1 '--' 20 Vee
AS 2
A6 3
A7 4
AS 5
A9 6
19 PA3
18 PA2
17 PAl
16 pAD
15 pDQ4
Al0 7
All 8
14 P 003
13 pDQ2
CE 9
Vss 10
12 POOl
P11 WE
l-
'~I'll.
V,
~
",
:s:::::
• 2V data retention
L
• Temperature
Commercial (O°C to +70°C)
Industrial (-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended (-55°C to +125°C)
None
IT
AT
XT
• Part Number Example: MT5C1604DJ-10 L
NOTE: Not all combinations of operating temperature, speed, data retention
and lowpowerarenecessarilyavailable. Pleasecontactthe factory for availabil-
ity of specific part number combinations.
24-Pin SOJ
(5D-1)
A4 [ 1
A5[ 2
A6 [ 3
A7 [ 4
AS [ 5
A9 [ 6
NC [ 7
Al0 [ 8
All [ 9
CE [ 10
NC [ 11
Vss [ 12
24 b Vee
23 pA3
22 pA2
21 pAl
20 PAO
19 PNC
18 PNC
17 POQ4
16 pOQ3
15 P002
14 pOOl
13 PWE
GENERAL DESCRIPTION
The MT5Cl604 is organized as a 4,096 x 4 SRAM using a
four-transistor memory cell with a high-speed, low-power
CMOSprocess. MicronSRAMs arefabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high:::2eed memory applications,
Micron offers chip enable (CE) with all organizations. This
enhancement can place the outputs in High-Z for
additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE) and CE inputs are both LOW. Reading is
accomplished when WE remains HIGH and CE goes to
LOW. The device offers a reduced power standby mode
when disabled. This allows system designers to meet low
standby power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TIL-compatible.
MT5C'604
AEV.12193:
1-41
Mcron Semic:ordJctor, Inc., reaerves the right to change products or apedI\catIonI without notice.
01993, MIcron hmkxJnducIor,lnC.




Micron

MT5C1604 Datasheet Preview

MT5C1604 Datasheet

4K x 4 SRAM

No Preview Available !

MIC:RON
1-· '" " we,
C1I
0<
Ci
en A ----.
»:xJ A ----.
s:
A ----. a:
W
Cl
A ----.
0
(w)
Cl
A ----.
3:
a0:
A ----.
A ----.
(LSB)
t
A
FUNCTIONAL BLOCK DIAGRAM
Vee GND
~~
16,384-BIT
MEMORY ARRAY
...J
0a:
Iz-
0
()
:0:::::
MT5C1604
4K x 4 SRAM
DQ4
DQ1
CE
COLUMN DECODER
ttt
AAA
(LSB)
t
A
POWER
DOWN
WE
MT5C1604
REV. 12193
TRUTH TABLE
MODE
STANDBY
READ
WRITE
CE WE"
HX
LH
LL
DO
HIGH-Z
Q
D
POWER
STANDBY
ACTIVE
ACTIVE
1-42
Micron Semiconductor, Inc., reserves the right to change products or specifications without noticE
@1993,MicronSemlconductor,lnc


Part Number MT5C1604
Description 4K x 4 SRAM
Maker Micron
PDF Download

MT5C1604 Datasheet PDF






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