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MT29F8G08ABABA - NAND Flash Memory

Description

9 Signal Assignments 10 Package Dimensions 12 Architecture 14 Device and Array Organization 15 Bus Operation Asynchronous Interface 17 Asynchronous Enable/Standby 17 Asynchronous Bus Idle 17 Asynchronous Commands 18 Asynchronous Addresses 19 Asynchronous Data Input 20 Asynchrono

Features

  • NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features.
  • Open NAND Flash Interface (ONFI) 2.1-compliant1.
  • Single-level cell (SLC) technology.
  • Organization.
  • Page size x8: 4320 bytes (4096 + 224 bytes).
  • Block size: 128 pages (512K +28 K bytes).
  • Plane size: 2 planes x 1024 blocks per plane.
  • Device size: 8Gb: 2048 blocks.
  • Synchronous I/O performance.
  • Up to synchronous timing mode 4.
  • Clock rate: 12ns (DDR).

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Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Open NAND Flash Interface (ONFI) 2.1-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Block size: 128 pages (512K +28 K bytes) – Plane size: 2 planes x 1024 blocks per plane – Device size: 8Gb: 2048 blocks • Synchronous I/O performance – Up to synchronous timing mode 4 – Clock rate: 12ns (DDR) – Read/write throughput per pin: 166 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 4 – tRC/tWC: 25ns (MIN) • Array performance – Read page: 25µs (MAX) – Program page: 230µs (TYP) – Erase block: 700µs (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.
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