MT29F4G08ABBEAH4
MT29F4G08ABBEAH4 is NAND Flash Memory manufactured by Micron Technology.
Features
NAND Flash Memory
MT29F4G08ABBEAH4, MT29F4G16ABBEAH4, MT29F4G16ABAEAH4 MT29F4G08ABAEAWP, MT29F4G16ABAEAWP, MT29F4G08ABAEAH4 Features
- Open NAND Flash Interface (ONFI) 1.0-pliant1
- Single-level cell (SLC) technology
- Organization
- Page size x8: 4320 bytes (4096 + 224 bytes)
- Page size x16: 2160 words (2048 + 112 words)
- Block size: 64 pages (256K + 14K bytes)
- Plane size: 2 planes x 1024 blocks per plane
- Device size: 4Gb: 2048 blocks
- Asynchronous I/O performance
- t RC/t WC: 20ns (3.3V), 30ns (1.8V)
- Array performance
- Read page: 25µs
- Program page: 200µs (TYP)
- Erase block: 2ms (TYP)
- mand set: ONFI NAND Flash Protocol
- Advanced mand set
- Program page cache mode
- Read page cache mode
- One-time programmable (OTP) mode
- Block lock (1.8V only)
- Programmable drive strength
- Two-plane mands
- Multi-die (LUN) operations
- Read unique ID
- Internal data move
- Operation status byte provides software method for detecting
- Operation pletion
- Pass/fail condition
- Write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation pletion
- WP# signal: Write protect entire device
- First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management.
- RESET (FFh) required as first mand after power-on
- Alternate method of device initialization after power up (contact factory)
- Internal data move operations supported within the plane from which data is read
- Quality and reliability
- Data retention: JESD47G-pliant; see qualification...
