MT29F32G08AECCB Datasheet | Micron Technology

Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features - Open NAND Flash Interface (ONFI) 2.2-pliant1 - Single-level cell (SLC) technology - Organization - Page size x8: 4320 bytes (4096 + 224 bytes) - Block size: 128 pages (512K + 28K bytes) - Plane size: 2 planes x 2048 blocks per plane - Device size: 16Gb: 4096 blocks; 32Gb: 8192 blocks; 64Gb: 16,384 blocks - Synchronous I/O performance - Up to synchronous timing mode 5 - Clock rate: 10ns (DDR) - Read/write throughput per pin: 200 MT/s - Asynchronous I/O performance - Up to asynchronous timing mode 5 - t RC/t WC: 20ns (MIN) - Array performance - Read page: 35µs (MAX) - Program page: 350µs (TYP) - Erase block: 1.5ms (TYP) - Operating Voltage Range - VCC: 2.7- 3.6V - VCCQ: 1.7-1.95V, 2.7- 3.6V - mand set: ONFI NAND Flash Protocol - Advanced mand Set - Program cache - Read cache sequential - Read cache random - One-time programmable (OTP) mode - Multi-plane mands - Multi-LUN operations - Read unique ID - Copyback - First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 100). - RESET (FFh) required as first mand after power-on - Operation status byte provides software method for detecting - Operation pletion - Pass/fail condition - Write-protect...