• Part: MT29F32G08AECCB
  • Description: NAND Flash Memory
  • Manufacturer: Micron Technology
  • Size: 2.97 MB
MT29F32G08AECCB Datasheet (PDF) Download
Micron Technology
MT29F32G08AECCB

Key Features

  • Open NAND Flash Interface (ONFI) 2.2-pliant1
  • Single-level cell (SLC) technology
  • Synchronous I/O performance - Up to synchronous timing mode 5 - Clock rate: 10ns (DDR) - Read/write throughput per pin: 200 MT/s
  • Asynchronous I/O performance - Up to asynchronous timing mode 5 - tRC/tWC: 20ns (MIN)
  • Array performance - Read page: 35µs (MAX) - Program page: 350µs (TYP) - Erase block: 1.5ms (TYP)
  • mand set: ONFI NAND Flash Protocol
  • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 100)
  • RESET (FFh) required as first mand after power-on
  • Operation status byte provides software method for detecting - Operation pletion - Pass/fail condition - Write-protect status
  • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface