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M39L0R7090U3ZE6F - NOR Flash

Download the M39L0R7090U3ZE6F datasheet PDF. This datasheet also covers the M39L0R7070U3ZE6E variant, as both devices belong to the same nor flash family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • NOR Flash with Mobile LPDDR 133-Ball MCP M39L0Rx0x0U3 Features Multichip Package.
  • One die of 128Mb or 256Mb (MUX I/O, multiple bank, multilevel interface, burst) Flash memory.
  • One die of 128Mb or 512Mb LPDDR.
  • Supply voltages:.
  • VDDF = VDDQF = 1.7.
  • 1.95V.
  • VPPF = 9V for fast program.
  • VDDD = VDDQD = 1.7.
  • 1.95V.
  • Electronic signature:.
  • Manufacturer code: 20h.
  • Top device codes: M58LR128KC = 882Eh M58LR256KC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M39L0R7070U3ZE6E-Micron.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

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M39L0R7090U3ZE6E NOR Flash
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
128Mb, 256Mb NOR Flash and 128Mb, 512Mb LPDDR MCP Features NOR Flash with Mobile LPDDR 133-Ball MCP M39L0Rx0x0U3 Features Multichip Package • One die of 128Mb or 256Mb (MUX I/O, multiple bank, multilevel interface, burst) Flash memory • One die of 128Mb or 512Mb LPDDR • Supply voltages: – VDDF = VDDQF = 1.7–1.95V – VPPF = 9V for fast program – VDDD = VDDQD = 1.7–1.95V • Electronic signature: – Manufacturer code: 20h – Top device codes: M58LR128KC = 882Eh M58LR256KC = 881Ch – Bottom device codes: M58LR128KD = 882Fh M58LR256KD = 881Dh • 133-ball VFBGA package – RoHS-compliant Flash Memory • Multiplexed address/data • Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Random access: 70ns • Synchronous burst read suspend • Programming time – 2.