M39L0R7090U3ZE6F Overview
Key Features
- One die of 128Mb or 256Mb (MUX I/O, multiple bank, multilevel interface, burst) Flash memory
- One die of 128Mb or 512Mb LPDDR
- Supply voltages: – VDDF = VDDQF = 1.7–1.95V – VPPF = 9V for fast program – VDDD = VDDQD = 1.7–1.95V
- 133-ball VFBGA package – RoHS-compliant Flash Memory
- Multiplexed address/data
- Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Random access: 70ns
- Synchronous burst read suspend
- Programming time – 2.5µs typical word program time using buffer enhanced factory program command
- Memory organization – Multiple bank memory array: 16Mb banks – Parameter blocks (top or bottom location
