M29W128GH
Key Features
- Supply voltage - VCC = 2.7-3.6V (program, erase, read) - VCCQ = 1.65-3.6V (I/O buffers) - VPPH = 12V for fast program (optional)
- Asynchronous random/page read - Page size: 8 words or 16 bytes - Page access: 25, 30ns - Random access: 60ns1, 70, 80ns
- Fast program mands: 32-word (64-byte) write buffer
- Enhanced buffered program mands: 256-word
- Program time
- 16µs per byte/word TYP - Chip program time: 5s with VPPH and 8s without VPPH
- Memory organization
- Uniform blocks: 128 main blocks, 128-Kbytes or 64-Kwords each
- Program/erase controller - Embedded byte/word program algorithms
- Unlock bypass, block erase, chip erase, write to buffer, enhanced b
