M29W128GH
M29W128GH is Parallel NOR Flash Embedded Memory manufactured by Micron Technology.
Features
Parallel NOR Flash Embedded Memory
M29W128GH, M29W128GL
Features
- Supply voltage
- VCC = 2.7- 3.6V (program, erase, read)
- VCCQ = 1.65- 3.6V (I/O buffers)
- VPPH = 12V for fast program (optional)
- Asynchronous random/page read
- Page size: 8 words or 16 bytes
- Page access: 25, 30ns
- Random access: 60ns1, 70, 80ns
- Fast program mands: 32-word (64-byte) write buffer
- Enhanced buffered program mands: 256-word
- Program time
- 16µs per byte/word TYP
- Chip program time: 5s with VPPH and 8s without
VPPH
- Memory organization
- Uniform blocks: 128 main blocks, 128-Kbytes or 64-Kwords each
- Program/erase controller
- Embedded byte/word program algorithms
- Program/erase suspend and resume capability
- Read from any block during a PROGRAM SUSPEND operation
- Read or program another block during an ERASE SUSPEND operation
- Unlock bypass, block erase, chip erase, write to buffer, enhanced...
