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EDFA164A1MA - Mobile LPDDR3 SDRAM

Download the EDFA164A1MA datasheet PDF. This datasheet also covers the EDF8164A1MA variant, as both devices belong to the same mobile lpddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Features

  • Mobile LPDDR3 SDRAM EDF8164A1MA, EDFA164A1MA Features.
  • Ultra-low-voltage core and I/O power supplies.
  • Frequency range.
  • 800/933 MHz (data rate: 1600/1866 Mb/s/pin).
  • 8n prefetch DDR architecture.
  • 8 internal banks for concurrent operation.
  • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge.
  • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c).
  • Programmable READ and.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EDF8164A1MA-Micron.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
8Gb, 16Gb: 253-Ball, Dual-Channel Mobile LPDDR3 SDRAM Features Mobile LPDDR3 SDRAM EDF8164A1MA, EDFA164A1MA Features • Ultra-low-voltage core and I/O power supplies • Frequency range – 800/933 MHz (data rate: 1600/1866 Mb/s/pin) • 8n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) • Programmable READ and WRITE latencies (RL/WL) • Burst length: 8 • Per-bank refresh for concurrent operation • Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor • Partial-array self refresh (PASR) • Deep power-down mode (DPD) • Selectable output drive strength (DS) • Clock-stop capability • O
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