Datasheet4U Logo Datasheet4U.com

EDF8164A1MA - Mobile LPDDR3 SDRAM

Features

  • Mobile LPDDR3 SDRAM EDF8164A1MA, EDFA164A1MA Features.
  • Ultra-low-voltage core and I/O power supplies.
  • Frequency range.
  • 800/933 MHz (data rate: 1600/1866 Mb/s/pin).
  • 8n prefetch DDR architecture.
  • 8 internal banks for concurrent operation.
  • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge.
  • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c).
  • Programmable READ and.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
EDF-2 E-Series Diplexer 5-1000 MHz Tyco Electronics
EDF-2E E-Series Diplexer 5-1000 MHz Tyco Electronics
EDF1AM MINIATURE GLASS PASSIVATED FAST EFFICIENT BRIDGE RECTIFIER General
EDF1AM MINIATURE GLASS PASSIVATED ULTRAFAST BRIDGE RECTIFIERS EIC
EDF1AM Miniature Glass Passivated Ultrafast Bridge Rectifier Vishay

Other Datasheets by Micron Technology

Part Number Description
EDF8132A1MC Mobile LPDDR3 SDRAM
EDFA164A1MA Mobile LPDDR3 SDRAM
EDFA232A1MA Mobile LPDDR3 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
8Gb, 16Gb: 253-Ball, Dual-Channel Mobile LPDDR3 SDRAM Features Mobile LPDDR3 SDRAM EDF8164A1MA, EDFA164A1MA Features • Ultra-low-voltage core and I/O power supplies • Frequency range – 800/933 MHz (data rate: 1600/1866 Mb/s/pin) • 8n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) • Programmable READ and WRITE latencies (RL/WL) • Burst length: 8 • Per-bank refresh for concurrent operation • Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor • Partial-array self refresh (PASR) • Deep power-down mode (DPD) • Selectable output drive strength (DS) • Clock-stop capability • O
Published: |