VRF141G mosfet equivalent, dual rf power mosfet.
* Improved ruggedness V(BR)DSS = 80 V
* 300 W with 14 dB typical gain at 175 MHz, 28 V
* Excellent stability and low IMD
* Common source push-pull configur.
at frequencies to 175 MHz. The high power, high gain, and broadband performance of this device make possible solid state.
* Document migrated from Microsemi template to Microchip template; Assigned Microchip literatur.
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