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TP2520 - P-Channel Vertical DMOS FET

General Description

The TP2520 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Key Features

  • 2.4V Maximum Low Threshold.
  • High Input Impedance.
  • 125 pF Maximum Low Input Capacitance.
  • Fast Switching Speeds.
  • Low On-Resistance.
  • Free from Secondary Breakdown.
  • Low Input and Output Leakage.

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Datasheet Details

Part number TP2520
Manufacturer Microchip
File Size 307.12 KB
Description P-Channel Vertical DMOS FET
Datasheet download datasheet TP2520 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features • –2.4V Maximum Low Threshold • High Input Impedance • 125 pF Maximum Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TP2520 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.