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TP2520 - P-Channel Vertical DMOS FET

Datasheet Summary

Description

The TP2520 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Features

  • 2.4V Maximum Low Threshold.
  • High Input Impedance.
  • 125 pF Maximum Low Input Capacitance.
  • Fast Switching Speeds.
  • Low On-Resistance.
  • Free from Secondary Breakdown.
  • Low Input and Output Leakage.

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Datasheet preview – TP2520

Datasheet Details

Part number TP2520
Manufacturer Microchip
File Size 307.12 KB
Description P-Channel Vertical DMOS FET
Datasheet download datasheet TP2520 Datasheet
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Full PDF Text Transcription

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TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features • –2.4V Maximum Low Threshold • High Input Impedance • 125 pF Maximum Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TP2520 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
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