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TN5325 - N-Channel Vertical DMOS FET

Description

The TN5325 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process.

Features

  • Low Threshold (2V Maximum).
  • High Input Impedance and High Gain.
  • Free from Secondary Breakdown.
  • Low CISS and Fast Switching Speeds.

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Datasheet Details

Part number TN5325
Manufacturer Microchip
File Size 845.17 KB
Description N-Channel Vertical DMOS FET
Datasheet download datasheet TN5325 Datasheet

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Full PDF Text Transcription (Reference)

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TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features • Low Threshold (2V Maximum) • High Input Impedance and High Gain • Free from Secondary Breakdown • Low CISS and Fast Switching Speeds Applications • Logic-level Interfaces (Ideal for TTL and CMOS) • Solid State Relays • Battery-operated Systems • Photo-voltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN5325 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
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