TN2501 fet equivalent, n-channel vertical dmos fet.
* Low Threshold
* High Input Impedance
* 110 pF Maximum Low-Input Capacitance
* Fast Switching Speeds
* Low On-Resistance
* Free from Secondary Br.
* Logic-Level Interfaces (Ideal for TTL and CMOS)
* Solid-State Relays
* Battery-Operated Systems
* Phot.
The TN2501 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling .
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