| Description | The TN2501 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devi... |
| Features |
• Low Threshold • High Input Impedance • 110 pF Maximum Low-Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purp... |
| Datasheet |
 TN2501 Datasheet - 949.65KB |
