TN2124 Datasheet | Microchip Technology

Features - Free from Secondary Breakdown - Low Power Drive Requirement - Ease of Paralleling - Low CISS and Fast Switching Speeds - Excellent Thermal Stability - Integral Source-Drain Diode - High Input Impedance and High Gain Applications - Logic-Level Interfaces (Ideal for TTL and CMOS) - Solid-State Relays - Battery-Operated Systems - Photovoltaic Drives - Analog Switches - General Purpose Line Drivers - Telemunication Switches General Description The TN2124 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type 3-lead SOT-23 (Top view) DRAIN See Table 3-1 for pin information. SOURCE GATE  2018 Microchip Technology Inc. DS20005698A-page 1 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage ±20V Operating Ambient Temperature,...