TN2124
Description
The TN2124 low-threshold Enhancement-mode (normally-off) transistor uses a vertical Diffusion Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.
Key Features
- Free from Secondary Breakdown
- Low Power Drive Requirement
- Ease of Paralleling
- Low CISS and Fast Switching Speeds
- Excellent Thermal Stability
- Integral Source-Drain Diode
- High Input Impedance and High Gain
