TN0604 - N-Channel Vertical DMOS FET

Microchip

General Description

The TN0604 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Key Features

1.6V Maximum Low Threshold.
High Input Impedance.
140 pF Typical Low Input Capacitance.
Fast Switching Speeds.
Low On-Resistance.
Free from Secondary Breakdown.
Low Input and Output Leakage.

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TN0604 n-channel vertical dmos fet by Microchip - Datasheet Preview

Datasheet Details

Part number	TN0604
Manufacturer	Microchip
File Size	307.68 KB
Description	N-Channel Vertical DMOS FET
Datasheet	TN0604 Datasheet

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TN0606	N-Channel Vertical DMOS FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features • 1.6V Maximum Low Threshold • High Input Impedance • 140 pF Typical Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN0604 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.