TN0106 fet equivalent, n-channel vertical dmos fet.
* 2V Maximum Low Threshold
* High Input Impedance
* 50 pF Typical Low Input Capacitance
* Fast Switching Speeds
* Low On-Resistance
* Free from Se.
* Logic-Level Interfaces (Ideal for TTL and CMOS)
* Solid-State Relays
* Battery-Operated Systems
* Phot.
The TN0106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors an.
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