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TC7920 - Dual-Channel MOSFETs

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General Description

The TC7920 consists of two pairs of high-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package.

All MOSFETs have integrated the output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications.

The complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Overview

TC7920 Two-Pair N-Channel and P-Channel Enhancement-Mode MOSFETs with Drain.

Key Features

  • High-Voltage Vertical DMOS Technology.
  • Integrated Drain Output High-Voltage Diodes.
  • Integrated Gate-to-Source Resistor.
  • Integrated Gate-to-Source Zener Diode.
  • Low Threshold, Low On-Resistance.
  • Low Input and Output Capacitance.
  • Fast Switching Speeds.
  • Electrically Isolated N-channel and P-channel MOSFET Pairs.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Supertex Logo TC7920 N- and P-Channel Enhancement-Mode MOSFET Supertex

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