MSC080SMA330B4
Overview
The silicon carbide (Si C) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA330B4 device is a 3300 V, 80 mΩ Si C MOSFET in a TO-247 4-lead package with a source sense.
Features
The following are key features of the MSC080SMA330B4 device:
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 150 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- Ro HS pliant
Benefits
The following are benefits of the MSC080SMA330B4 device:
- High efficiency to enable lighter, more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode
- Lower system cost of ownership
Applications
The MSC080SMA330B4 device is...
