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MSC080SMA120B - N-Channel MOSFET

Features

  • Low capacitances and low gate charge.
  • Fast switching speed due to low internal gate resistance (ESR).
  • Stable operation at high junction temperature, TJ(max) = 175 °C.
  • Fast and reliable body diode.
  • Superior avalanche ruggedness.
  • RoHS compliant Benefits.
  • High efficiency to enable lighter and more compact system.
  • Simple to drive and easy to parallel.
  • Improved thermal capabilities and lower switching losses.
  • E.

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Full PDF Text Transcription

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1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120B Product Overview 1200V, 80 mΩ typical at 20 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247.
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