MSC080SMA120B Overview
1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120B Product Overview 1200V, 80 mΩ typical at 20 VGS, Silicon Carbide (SiC) N-Channel MOSFET, TO-247.
MSC080SMA120B Key Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS pliant Benefits
- High efficiency to enable lighter and more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode