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MSC030SDA330B - Zero Recovery Silicon Carbide Schottky Diode

Features

  • The following are key features of the MSC030SDA330B device:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • RoHS compliant Benefits The following are benefits of the MSC030SDA330B device:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.
  • Increased system power density.

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Datasheet Details

Part number MSC030SDA330B
Manufacturer Microchip
File Size 2.97 MB
Description Zero Recovery Silicon Carbide Schottky Diode
Datasheet download datasheet MSC030SDA330B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC030SDA330B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC030SDA330B device is a 3300 V, 30 A SiC SBD in a two-lead TO-247 package.
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