MMS006AA Datasheet | Microchip Technology

Overview The MMS006AA device is a DC-to-20 GHz, non-reflective gallium arsenide (Ga As) pseudomorphic high-electron mobility transistor (p HEMT), high isolation single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) chip. The switch delivers over 40 d B of isolation across the entire DC-to-20 GHz frequency range, while maintaining a low insertion loss of less than 2 d B. The MMS006AA device operates using two negative control voltage logic lines of - 5V and 0V, respectively. It requires no VEE, and consumes essentially zero current. The RF ports are internally matched to 50Ω, which allows for easy integration into multi-chip modules (MCMs). Key Features - Wide operating range: DC- 20 GHz Functional Block Diagram - Low insertion loss: <2 d B - High input P1d B: 24 d Bm - Excellent isolation: >40 d B - High input IP3: 42 d Bm - Fast switching: <10 ns - Non-reflective topology - pact die size: 0.85 mm × 1.30 mm × 0.1 mm 15 16 Applications - Test instrumentation - Military radar, radio, EW, and ECM applications - General purpose microwave applications Table 1. Performance Overview Parameter Input frequency Insertion loss Isolation Input P1d B Typ DC- 20 <2 < - 40 Units GHz d B d B d...