The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MMA041PP5
DC – 25 GHz GaAs MMIC Distributed LNA
Product Overview
MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic highelectron-mobility transistor (pHEMT) distributed low noise amplifier in a leadless 5 mm × 5 mm surface-mount package that operates between DC and 25 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a flat gain of 17 dB, 2.5 dB noise figure, and 21 dBm of output power at 1 dBm gain compression while requiring only 150 mA from a 7 V supply. Output IP3 is typically 35 dBm. The MMA041PP5 amplifier features RF I/Os that are internally matched to 50 Ω. It is also available in die form as the MMA041AA.