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MMA041PP5 - GaAs MMIC Distributed LNA

Features

  • RF I/Os that are internally matched to 50 Ω. It is also available in die form as the MMA041AA. Key Features Amplifier Functional Diagram.
  • Broadband performance: DC to 26 GHz.
  • High gain: 18.5 dB.
  • Low noise figure: 3.2 dB.
  • High output IP3: + 36 dBm.
  • Positive supply : + 7V @ 150 mA.
  • 50Ω matched I/O.
  • Compact die size: 3 mm × 1.3 mm × 0.1 mm.

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MMA041PP5 DC – 25 GHz GaAs MMIC Distributed LNA Product Overview MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic highelectron-mobility transistor (pHEMT) distributed low noise amplifier in a leadless 5 mm × 5 mm surface-mount package that operates between DC and 25 GHz. It is ideal for test instrumentation, wideband military and space applications. The amplifier provides a flat gain of 17 dB, 2.5 dB noise figure, and 21 dBm of output power at 1 dBm gain compression while requiring only 150 mA from a 7 V supply. Output IP3 is typically 35 dBm. The MMA041PP5 amplifier features RF I/Os that are internally matched to 50 Ω. It is also available in die form as the MMA041AA.
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