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LP0701 - P-Channel MOSFET

Description

The LP0701 Enhancement-mode (normally-off) transistor uses a lateral MOS structure and a well-proven silicon-gate manufacturing process.

Features

  • Ultra-Low Threshold.
  • High Input Impedance.
  • Low Input Capacitance.
  • Fast Switching Speeds.
  • Low On-Resistance.
  • Freedom from Secondary Breakdown.
  • Low Input and Output Leakage.

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Full PDF Text Transcription (Reference)

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LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features • Ultra-Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Freedom from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers General Description The LP0701 Enhancement-mode (normally-off) transistor uses a lateral MOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices.
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