LP0701 Overview
The LP0701 Enhancement-mode (normally-off) transistor uses a lateral MOS structure and a well-proven silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally...
LP0701 Key Features
- Ultra-Low Threshold
- High Input Impedance
- Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Freedom from Secondary Breakdown
- Low Input and Output Leakage
