JANSR2N7589U3
Overview
Microchip’s new M6TM technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total Dose and Single-Event environments. M6 will perform in extreme-environment applications and will remain within specification in radiation evironments up to 100 krad total ionizing dose (TID). Figure 1. MRH15N19U3SR/JANSR2N7589U3
Features
The following are key features of the MRH15N19U3SR/JANSR2N7589U3 device:
- Low RDS(on)
- Fast switching
- Single-event hardened
- Low gate charge
- Simple drive
- Ease of paralleling
- Hermetically sealed
- Surface-mount design
- Ceramic package
- ESD rating: Class 3B MIL-STD-750, TM 1020 Applications The MRH15N19U3SR/JANSR2N7589U3 device is designed for the following applications:
- DC- DC converters
- Motor control
- Switch mode power...
