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DN2625 - N-Channel Depletion-Mode Vertical DMOS FET

General Description

The DN2625 is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process.

Key Features

  • Very Low Gate Threshold Voltage.
  • Designed to be Source-driven.
  • Low Switching Losses.
  • Low Effective Output Capacitance.
  • Designed for Inductive Loads.

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Full PDF Text Transcription (Reference)

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DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features • Very Low Gate Threshold Voltage • Designed to be Source-driven • Low Switching Losses • Low Effective Output Capacitance • Designed for Inductive Loads Applications • Medical Ultrasound Beamforming • Ultrasonic Array-focusing Transmitter • Piezoelectric Transducer Waveform Drivers • High-speed Arbitrary Waveform Generator • Normally-on Switches • Solid-state Relays • Constant Current Sources • Power Supply Circuits General Description The DN2625 is a low-threshold Depletion-mode (normally-on) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process.