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DN2530 - Vertical DMOS FET

General Description

The DN2530 is a low-threshold, depletion-mode, normally-on transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Key Features

  • High-input impedance.
  • Low-input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DN2530 N-Channel, Depletion-Mode, Vertical DMOS FET Features • High-input impedance • Low-input capacitance • Fast switching speeds • Low on-resistance • Free from secondary breakdown • Low input and output leakage Applications • Normally-on switches • Solid state relays • Converters • Linear amplifiers • Constant current sources • Power supply circuits • Telecom Description The DN2530 is a low-threshold, depletion-mode, normally-on transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices.