DN2530 Datasheet | Microchip Technology

N-Channel, Depletion-Mode, Vertical DMOS FET Features - High-input impedance - Low-input capacitance - Fast switching speeds - Low on-resistance - Free from secondary breakdown - Low input and output leakage Applications - Normally-on switches - Solid state relays - Converters - Linear amplifiers - Constant current sources - Power supply circuits - Tele Description The DN2530 is a low-threshold, depletion-mode, normally-on transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon-gate manufacturing process. This bination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where high breakdown-voltage, high-input impedance, low-input capacitance, and fast switching speeds are desired. Package Types SOURCE DRAIN GATE TO-92 See Table 2-1 for pin information DRAIN SOURCE DRAIN GATE TO-243AA (SOT-89)  2016 Microchip Technology Inc. DS20005451A-page 1 1.0 ELECTRICAL CHARACTERISTICS...