2N6661 Key Features
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
- Part: 2N6661
- Description: N-Channel Enhancement-Mode Vertical DMOS FET
- Manufacturer: Microchip Technology
- Size: 292.64 KB
Other 2N6661 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Supertex Inc |
2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs |
Motorola Semiconductor |
2N6661 | TMOS SWITCHING FET TRANSISTORS |
Vishay |
2N6661 | N-Channel MOSFET |
TT Electronics |
2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |