LLSD101C Datasheet | Micro Commercial Components

Features l l l l Low Reverse Recovery Time Low Reverse Capacitance Low Forward Voltage Drop omponents 21201 Itasca Street Chatsworth !"# $ % !"# LLSD101A THRU LLSD101C Schottky Barrier Switching Diode Guard Ring Construction for Transient Protection Mechanical Data l Case: Mini MELF, Glass l Terminals: Solderable per MIL -STD -202, Method 208 l Polarity: Indicated by Cathode Band l Weight: 0.05 grams ( approx.) Cathode Mark MINIMELF Maximum Ratings @ 25o C Unless Otherwise Specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current(Note 1) Non-Repetitive Peak @ t<=1.0s Forward Surge Current @ t=10us Power Dissipation(Note 1) Thermal Resistance(Note 1) Operation & Storage Temp. Range Symbol LLSD101A LLSD101B LLSD101C V RRM VRWM 60V 50V 40V VR VR(RMS) I FM I FSM Pd R Tj, T STG 42V 35V 15m A 50m A 2.0A DIMENSION 400m W 375K/W -55 to 150 C o 28V DIM A B C INCHES MIN .134 .008 .055 MAX .142 .016 .059 MIN 3.40 .20 1.40 MM MAX 3.60 .40 1.50 NOTE Electrical Characteristics @ 25o C Unless Otherwise Specified Charateristic Symbol Peak LLSD101A Reverse LLSD101B IR M Current LLSD101C LLSD101A LLSD101B Forward LLSD101C VFM Volt. Drop LLSD101A LLSD101B LLSD101C Junction LLSD101A Capacitance LLSD101B Cj LLSD101C Reverse Recovery Time t rr Min Max 200 0.41 0.40 0.39 1.00 0.95 0.90 2.0 2.1 2.2 1.0 Unit n A Test Cond. V R =50V V R =40V V R =30V I F=1.0m A I F=1.0m A I F=1.0m A I F= 1 5 m A I F= 1 5 m A I F= 1 5 m A V R =0V, f=1.0MHz I F= I R =5m A, recover to 0.1 I ----- SUGGESTED SOLDER PAD LAYOUT ----- 0.075” 0.030” --------- p F ns Note: 1. Valid provided that electrodes are kept at ambient temperature .mccsemi. LLSD101A thru LLSD101C Tj = 25°C IF, FORWARD CURRENT (m A) Cj, CAPACITANCE (p F) 0.01 0 0.5 VF, FORWARD VOLTAGE (V) Fig. 1 Typical Forward...