MEM2309 - P-Channel MOSFET

Description

MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.

This device particularly suits low voltage applications, and low power dissipation.

MicrOne

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Datasheet Details

Part number	MEM2309
Manufacturer	MicrOne
File Size	869.30 KB
Description	P-Channel MOSFET
Datasheet	MEM2309 Datasheet
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MEM2309 P-Channel MOSFET MEM2309S Descriptionÿ MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation. Featureÿ l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4.

Published: Jan 14, 2014 |