MEM2309 Datasheet, MicrOne

and low power dissipation. Featureÿ l -30V/-6A RDS(ON) =53m Ω@ VGS=-10V,ID=-6A RDS(ON) =68mΩ@ VGS=-4.5V,ID=-4A High De.

MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low po.