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MT41J64M16LA-187E - DDR3 SDRAM

Download the MT41J64M16LA-187E datasheet PDF. This datasheet also covers the MT41J256M4 variant, as both devices belong to the same ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • Features.
  • VDD = VDDQ = +1.5V ±0.075V.
  • 1.5V center-terminated push/pull I/O.
  • Differential bidirectional data strobe.
  • 8n-bit prefetch architecture.
  • Differential clock inputs (CK, CK#).
  • 8 internal banks.
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals.
  • CAS (READ) latency (CL): 5, 6, 7, 8, 9, 10, or 11.
  • POSTED CAS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT41J256M4_Micon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micon

Part Number Description
MT41J64M16 DDR3 SDRAM
MT41J128M16 DDR3 SDRAM
MT41J128M8 DDR3 SDRAM
MT41J1G4 DDR3 SDRAM
MT41J256M16 DDR3 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 Banks MT41J128M8 – 16 Meg x 8 x 8 Banks MT41J64M16 – 8 Meg x 16 x 8 Banks 1Gb: x4, x8, x16 DDR3 SDRAM Features Features • VDD = VDDQ = +1.5V ±0.075V • 1.