Datasheet Summary
256K EEPROM (32K x 8-Bit) EEPROM
VCC GND DATA INPUTS/OUTPUTS I/O0
- I/O7
OE WE CE OE, CE, and WE LOGIC
DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX
..
ADDRESS INPUTS
Y DECODER
X DECODER IDENTIFICATION
Logic Diagram
Memory
Features
:
- RAD-PAK® radiation-hardened against natural space radiation
- Total dose hardness:
- > 100 Krad (Si), dependent upon space mission
- Excellent Single Event Effects:
- SELTH LET: > 120 MeV/mg/cm2
- SEUTH LET (read mode): > 90 MeV/mg/cm2
- SEUTH LET (write mode): > 18 MeV/mg/cm2
- Package:
- 28 pin RAD-PAK® flat pack
- 28 pin RAD-PAK® DIP
- JEDEC approved byte wide pinout
- High Speed:
- 120, 150 ns maximum access times...
