DS28E80 Datasheet | Maxim Integrated

EVALUATION KIT AVAILABLE Gamma Radiation Resistant 1-Wire Memory General Description The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 municates over the single-contact 1-Wire® bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip. The munication follows the 1-Wire protocol with a 64-bit registration number acting as node address in the case of a multiple-device 1-Wire network. Applications - - Identification of Medical Consumables - - Identification and Calibration Medical Tools/Accessories 1-Wire is a registered trademark of Maxim Integrated Products, Inc. Ordering Information appears at end of data sheet. Features and Benefits - - High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization - Resistant Up to 75k Gy (kilo Gray) of Gamma Radiation - Reprogrammable 248 Bytes of User Memory - - Lower Block Size Provides Greater Flexibility in Programming User Memory - Memory is Organized as 8-Byte Blocks - Each Block Can Be Written 8 Times - User-Programmable Write Protection for Individual Memory Blocks - - Advanced 1-Wire Protocol Minimizes Interface to Just Single Contact - - pact Package and Single IO Interface Reduces Board Space and Enhances Reliability - Unique Factory-Programmed, 64-Bit Identification Number - municates at 1-Wire Standard Speed (15.3kbps max) and Overdrive Speed (76kbps max) - Operating Range: 3.3V ±10%, -40°C to + 85°C Reading, 0°C to +50°C Writing - ±8k V HBM ESD Protection (typ) for IO Pin - 6-Pin TDFN Package Typical Application Circuit VCC...