DS28E80 Datasheet PDF (Gamma Radiation Resistant 1-Wire Memory)

DS28E80 - Gamma Radiation Resistant 1-Wire Memory

Description

The DS28E80 is a user-programmable nonvolatile memory chip.

In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation.

The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes.

Features

High Gamma Resistance Allows User-Programmable Manufacturing or Calibration Data Before Medical Sterilization.
Resistant Up to 75kGy (kiloGray) of Gamma Radiation.
Reprogrammable 248 Bytes of User Memory.
Lower Block Size Provides Greater Flexibility in Programming User Memory.
Memory is Organized as 8-Byte Blocks.
Each Block Can Be Written 8 Times.
User-Programmable Write Protection for Individual Memory Blocks.
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Datasheet Details

Part number	DS28E80
Manufacturer	Maxim Integrated
File Size	410.55 KB
Description	Gamma Radiation Resistant 1-Wire Memory
Datasheet	DS28E80 Datasheet
Additional preview pages of the DS28E80 datasheet.

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Full PDF Text Transcription

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DS28E80 EVALUATION KIT AVAILABLE Gamma Radiation Resistant 1-Wire Memory General Description The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire® bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip.

Published: Dec 5, 2015 |