MESS138W - N-Channel MOSFET

Matsuki

General Description

The MESS138W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦3Ω@VGS=10V.
RDS(ON)≦3.5Ω@VGS=5V.
RDS(ON)≦7Ω@VGS=2.75V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

MESS138W n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	MESS138W
Manufacturer	Matsuki
File Size	738.98 KB
Description	N-Channel MOSFET
Datasheet	MESS138W Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MES1206	DC-to-DC Converter Modules	ETC
MES1M32G120M	High Speed 32 Mbit CMOS S-RAM Module	Elisra
MES1M32G135M	High Speed 32 Mbit CMOS S-RAM Module	Elisra
MES1M32G145M	High Speed 32 Mbit CMOS S-RAM Module	Elisra
MES1M32G220M	High Speed 32 Mbit CMOS S-RAM Module	Elisra

Other Datasheets by Matsuki

Part Number	Description
MESS138W-G	N-Channel MOSFET
MESS84W	P-Channel MOSFET
MESS84W-G	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N - Channel 50-V (D-S) MOSFET MESS138W/MESS138W-G GENERAL DESCRIPTION The MESS138W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦3Ω@VGS=10V ● RDS(ON)≦3.5Ω@VGS=5V ● RDS(ON)≦7Ω@VGS=2.