MESS138W-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦3Ω@VGS=10V
* RDS(ON)≦3.5Ω@VGS=5V
* RDS(ON)≦7Ω@VGS=2.75V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistan.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
PIN CONFIGURATIO.
The MESS138W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
* RDS(ON.
Image gallery
TAGS
Manufacturer
Related datasheet