MEBSS138DK mosfet equivalent, n-channel mosfet.
* RDS(ON)≦3.5Ω@VGS=10V
* RDS(ON)≦4Ω@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
(SOT-323) Top Vi.
The MEBSS138DK is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p.
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