MEBSS138D - N-Channel MOSFET

Matsuki

General Description

The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦3.5Ω@VGS=10V.
RDS(ON)≦4Ω@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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MEBSS138D n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	MEBSS138D
Manufacturer	Matsuki
File Size	1.08 MB
Description	N-Channel MOSFET
Datasheet	MEBSS138D Datasheet

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MEBSS138D-G	N-Channel MOSFET
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MEBSS138D/MEBSS138D-G N-Channel 50V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦3.5Ω@VGS=10V ● RDS(ON)≦4Ω@VGS=4.