* RDS(ON)≦3.5Ω@VGS=10V
* RDS(ON)≦4Ω@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (SOT-23) Top Vie.

The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.

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