MEBSS138D-G datasheet, mosfet equivalent, Matsuki

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 1.08MB)

Features and benefits

* RDS(ON)≦3.5Ω@VGS=10V
* RDS(ON)≦4Ω@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current.

Application

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (SOT-23) Top Vie.

Description

The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.

Image gallery