MEBSS138-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦3Ω@VGS=10V
* RDS(ON)≦3.5Ω@VGS=5V
* RDS(ON)≦7Ω@VGS=2.75V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistan.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
(SOT-23) Top Vie.
The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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