MEBSS123-G - N-Channel MOSFET

Matsuki

Download the MEBSS123-G datasheet PDF. This datasheet also covers the MEBSS123 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦6Ω@VGS=10V.
RDS(ON)≦10Ω@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

MEBSS123-G n-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MEBSS123-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MEBSS123-G
Manufacturer	Matsuki
File Size	726.96 KB
Description	N-Channel MOSFET
Datasheet	MEBSS123-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
MEBSS123	N-Channel MOSFET
MEBSS138	N-Channel MOSFET
MEBSS138-G	N-Channel MOSFET
MEBSS138D	N-Channel MOSFET
MEBSS138D-G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N - Channel 100-V (D-S) MOSFET MEBSS123/MEBSS123-G GENERAL DESCRIPTION The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦6Ω@VGS=10V ● RDS(ON)≦10Ω@VGS=4.