ME9926 Datasheet | Matsuki

Dual N-Channel 2.5-V (G-S) MOSFET GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Features - RDS(ON)≦29mΩ@VGS=4.5V - RDS(ON)≦42mΩ@VGS=2.5V - Super high density cell design for extremely low RDS(ON) - Exceptional...