ME9926 mosfet equivalent, dual n-channel 2.5-v (g-s) mosfet.
* RDS(ON)≦29mΩ@VGS=4.5V
* RDS(ON)≦42mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curr.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
P.
The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p.
Image gallery
TAGS
Download (Size : 622.19KB)