* RDS(ON)≦10.5mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS.

* Power Management
* DC/DC Converter
* Load Switch (TO-220) Top View e Ordering Information: ME80N75AT (Pb.

The ME80N75AT is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FE.

ME80N75AT

ME80N75AF

ME80N75AF-G

ME80N75F

ME80N75F-G

ME80N75T

ME80N75T-G

ME80N08

ME80N08-G

ME80N08A

ME80N08A-G

ME80N08AF

ME80N08AF-G

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