ME7114-G datasheet, mosfet equivalent, Matsuki

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datasheet Download (Size : 1.30MB)

Features and benefits

* RDS(ON)≦7mΩ@VGS=10V
* RDS(ON)≦10.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curr.

Application

* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch Bottom View e Ordering In.

Description

The ME7114-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.

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