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ME6874-G - Dual N-Channel 20V (D-S) MOSFET

Download the ME6874-G datasheet PDF. This datasheet also covers the ME6874 variant, as both devices belong to the same dual n-channel 20v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME6874 is the Dual N-Channel logic enhancement mode power

Key Features

  • 20V/6.0A,RDS(ON)=25mΩ@VGS=4.5V field effect transistors are produced using high cell density, DMOS.
  • 20V/5.2A,RDS(ON)=32mΩ@VGS=2.5V trench technology. This high density process is especially tailored to.
  • Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited.
  • Exceptional on-resistance and maximum DC current for low voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME6874-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME6874-G
Manufacturer Matsuki
File Size 688.40 KB
Description Dual N-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME6874-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME6874 Dual N-Channel 20V (D-S) MOSFET
ME60N03 30V N-Channel Enhancement Mode MOSFET
ME60N03-G 30V N-Channel Enhancement Mode MOSFET
ME60N03A 25V N-Channel Enhancement Mode MOSFET
ME60N03AS 25V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME6874/ME6874-G Dual N-Channel 20-V (G-S) MOSFET ＞ GENERAL DESCRIPTION The ME6874 is the Dual N-Channel logic enhancement mode power FEATURES ● 20V/6.0A,RDS(ON)=25mΩ@VGS=4.5V field effect transistors are produced using high cell density, DMOS ● 20V/5.2A,RDS(ON)=32mΩ@VGS=2.5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.