ME60P06T-G Datasheet P-Channel MOSFET

Manufacturer: Matsuki

Download the ME60P06T-G datasheet PDF. This datasheet also includes the ME60P06T variant, as both parts are published together in a single manufacturer document.

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ME60P06T-G p-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME60P06T-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME60P06T-G
Manufacturer	Matsuki
File Size	819.85 KB
Description	P-Channel MOSFET
Datasheet	ME60P06T-G Datasheet

General Description

The ME60P06T is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

PIN CONFIGURATION (TO-220) Top View ME60P06T/ME60P06T-G

Overview

P- Channel 60-V (D-S) MOSFET GENERAL.

Key Features

RDS(ON)≦16.5mΩ@VGS=-10V.
RDS(ON)≦20.5mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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