ME50N10T-G - N-Channel MOSFET

Matsuki

Download the ME50N10T-G datasheet PDF. This datasheet also covers the ME50N10T variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME50N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦30mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME50N10T-G n-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME50N10T-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME50N10T-G
Manufacturer	Matsuki
File Size	0.99 MB
Description	N-Channel MOSFET
Datasheet	ME50N10T-G Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ME500810	Three-Phase Diode Bridge Modules (100 Amperes/800 Volts)	Powerex Powers
ME501206	Three-Phase Diode Bridge Modules (60 Amperes/1200-1600 Volts)	Powerex Powers
ME501210	Three-Phase Diode Bridge Modules (100 Amperes/1200-1600 Volts)	Powerex Powers
ME501606	Three-Phase Diode Bridge Modules (60 Amperes/1200-1600 Volts)	Powerex Powers
ME501610	Three-Phase Diode Bridge Modules (100 Amperes/1200-1600 Volts)	Powerex Powers

Other Datasheets by Matsuki

Part Number	Description
ME50N10T	N-Channel MOSFET
ME50N10	N-Channel MOSFET
ME50N10-G	N-Channel MOSFET
ME50N10AT	N-Channel MOSFET
ME50N10AT-G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel 100-V (D-S) MOSFET ME50N10T/ME50N10T-G GENERAL DESCRIPTION The ME50N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.