* RDS(ON)≦270mΩ@VGS=10V
* RDS(ON)≦295mΩ@VGS=6.0V
* RDS(ON)≦350mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-.

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p.

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