Datasheet4U Logo Datasheet4U.com

ME4948-G - Dual N-Channel MOSFET

Download the ME4948-G datasheet PDF. This datasheet also covers the ME4948 variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME4948 is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

Features

  • RDS(ON)≦53 mΩ@VGS=10V.
  • RDS(ON)≦78 mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME4948-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME4948-G
Manufacturer Matsuki
File Size 1.39 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME4948-G Datasheet

Full PDF Text Transcription

Click to expand full text
Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4948 is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. ME4948/ME4948-G FEATURES ● RDS(ON)≦53 mΩ@VGS=10V ● RDS(ON)≦78 mΩ@VGS=4.
Published: |