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ME4946 - Dual N-Channel MOSFET

General Description

The ME4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦41mΩ@VGS=10V.
  • RDS(ON)≦52mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME4946
Manufacturer Matsuki
File Size 1.11 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet ME4946 Datasheet

Full PDF Text Transcription for ME4946 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ME4946. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet.co.kr ME4946 Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4946 is the Dual N-Channel logic enhancement mode power field effect transistors are...

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al N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦41mΩ@VGS=10V ● RDS(ON)≦52mΩ@VGS=4.

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