RDS(ON) 18 mΩ@VGS=10V RDS(ON) 30 mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICAT.

Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load SwitchC LCD Display inverte.

The ME4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are partic.

ME4410

ME4410A

ME4410B

ME4410B-G

ME4411

ME4411-G

ME4412-G

ME4425

ME4425-G

ME4435

ME4435-G

ME4436

ME4456

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