ME3985DS-G mosfet equivalent, dual p-channel 20v (d-s) mosfet.
* RDS(ON)≦120mΩ@VGS=-4.5V
* RDS(ON)≦160mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC .
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The ME3985DS is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.
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